Rancang Bangun Modul Praktikum Penggunaan Bipolar Junction Transistor Sebagai Sakelar Berbasis Arduino Mega
نویسندگان
چکیده
منابع مشابه
Toward complementary ionic circuits: the npn ion bipolar junction transistor.
Many biomolecules are charged and may therefore be transported with ionic currents. As a step toward addressable ionic delivery circuits, we report on the development of a npn ion bipolar junction transistor (npn-IBJT) as an active control element of anionic currents in general, and specifically, demonstrate actively modulated delivery of the neurotransmitter glutamic acid. The functional mater...
متن کاملWS 2017/2018 Graphen und biologische Netze (Modul 10-202-2205; Praktikum) Project Introduction
متن کامل
Junction Field Effect Transistor (JFET)
The single channel junction field-effect transistor (JFET) is probably the simplest transistor available. As shown in the schematics below (Figure 6.13 in your text) for the n-channel JFET (left) and the p-channel JFET (right), these devices are simply an area of doped silicon with two diffusions of the opposite doping. Please be aware that the schematics presented are for illustrative purposes...
متن کاملDemonstration of the first 9.2 kV 4H-SiC bipolar junction transistor
– This paper reports the first demonstration of a 9.2kV 4H-SiC bipolar junction transistor (BJT) based on a 50 μm, 7x10cm doped drift layer, achieving an emitter current density of 150A/cm at VCEO=5V. A much larger area BJT of identical wafer design with negligible current spreading effect would have an RSP_ON equal to 49mΩ-cm limited only by the specific resistance of the 50um drift layer. A D...
متن کاملDegradation of a Light Emitting Silicon Junction of a Bipolar Transistor
The variations of the current-voltage characteristics of a light emitting silicon junction of a bipolar transistor is monitored for the first time along an experiment performed at high constant reverse current. The evolutions of the parameters show the effects of degradation processes which are correlated with induced high injection effects and the changes in the avalanche generated light emiss...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: PoliGrid
سال: 2020
ISSN: 2723-4436,2723-4428
DOI: 10.46964/poligrid.v1i1.343